Samsung has managed to start mass production of those 4Gb DDR2 memory stacks, made with the 20nm process, which is more efficient than the current 30nm production.
What this means is that four 512MB layers can be stacked on top of each other for a grand total of 2GB RAM in mobile devices, and they will have the same footprint and power consumption the 1GB stack has now.
The LG Optimus LTE II for Korea and the Samsung Galaxy S III for Japan were already announced with 2GB of RAM, and now that the conveyor belts at Samsung Memory have been fired up, we can expect many more to come.
Samsung said that the 20nm RAM will take “approximately 13 percent of total DRAM shipments in 2012, 49 percent in 2013 and 63 percent in 2014, with 4Gb DRAM becoming the mainstream chip in the DRAM market around the end of 2013”. Cheers to that.
What this means is that four 512MB layers can be stacked on top of each other for a grand total of 2GB RAM in mobile devices, and they will have the same footprint and power consumption the 1GB stack has now.
The LG Optimus LTE II for Korea and the Samsung Galaxy S III for Japan were already announced with 2GB of RAM, and now that the conveyor belts at Samsung Memory have been fired up, we can expect many more to come.
Samsung said that the 20nm RAM will take “approximately 13 percent of total DRAM shipments in 2012, 49 percent in 2013 and 63 percent in 2014, with 4Gb DRAM becoming the mainstream chip in the DRAM market around the end of 2013”. Cheers to that.